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EFFECTS OF ARSENIC SEGREGATION AND ELECTRON TRAPPING ON THE CAPACITANCE-VOLTAGE BEHAVIOR OF POLYSILICON AND POLYCIDE GATES

著者名:
Lin, J.
Batra, S.
Park, K.
Banerjee, S.
Sun, S.
Yeargain, J.
Lux, G.
さらに 2 件
掲載資料名:
Polysilicon thin films and interfaces
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
182
発行年:
1990
開始ページ:
195
終了ページ:
200
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990715 [1558990712]
言語:
英語
請求記号:
M23500/182
資料種別:
国際会議録

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