Blank Cover Image

In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS

著者名:
Ren, F.
Pearton, S. J.
Hobson, W. S.
Fullowan, T. R.
Emerson, A. B.
Yanof, A. W.
Schleich, D. M.
さらに 2 件
掲載資料名:
Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
181
発行年:
1990
開始ページ:
481
終了ページ:
486
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990708 [1558990704]
言語:
英語
請求記号:
M23500/181
資料種別:
国際会議録

類似資料:

1 国際会議録 IMPROVEMENT OF OHMIC CONTACTS ON GaAs WITH IN-SITU CLEANING

Ren, F., Pearton, S. J., Fullowan, T. R., Hobson, W. S., Chu, S. N. G., Emerson, A. B.

Materials Research Society
7 国際会議録 DRY ETCH SELF-ALIGNED AlInAs/InGaAs HETEROJUNCTION BIPOLAR TRANSISTORS

Fullowan, T. R., Pearton, S. J., Kopf, R. F., Ren, F., Chen, Y. K., Smith, P. R., Chin, C. A., Lothian, J.

Materials Research Society
2 国際会議録 USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs

Ren, F., Emerson, A. B., Pearton, S. J., Hobson, W. S., Fullowan, T. R., Lothian, J.

Materials Research Society
8 国際会議録 ELECTRON CYCLOTRON RESONANCE PLASMA PROCESSING OF GaAs-AlGaAs HEMT STRUCTURES

Pearton, S. J., Ren, F., Lothian, J. R., Fullowan, T. R., Kopf, R. F., Chakrabati, U. K., Hui, S. P., Emerson, A. B., …

Materials Research Society
3 国際会議録 HIGHLY RELIABLE WGe OHMIC CONTACT TO GaAs-AlGaAs HBTs

Fullowan, T.R., Ren, F., Tseng, B., Pearton, S.J., Abernathy, C.R., Harriott, L.R., Lane, E.

Materials Research Society
9 国際会議録 ZINC DIFFUSION IN GaAs-A1GaAs HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURES

Hobson, W. S., Pearton, S. J., Jordan, A. S.

Materials Research Society
4 国際会議録 p-Ohmic Contact Study for Intra-Cavity Contacts in AlGaAs/GaAs VCSELs

Luo, B., Dang, G., Zhang, A.-P., Ren, F., Lopata, J., Chu, S.N.G., Hobson, W.S, Pearton, S.J.

Electrochemical Society
10 国際会議録 SULFIDE PASSIVATED GaAs/AlGaAs MICRODISK LASERS

Hobson, W. S., Mohideen, U., Pearton, S. J., Slusher, R. E., Ren, F., Schnoes, M. Lamont

MRS - Materials Research Society
5 国際会議録 Effects of N2 or Ar Plasma Exposure on GaAs/AlGaAs Heterojunction Bipolar Transistors *

Hsu, C.H., Chen, C.C., Ren, B.Luo.F., Pearton, S.J., Abernathy, C.R., Lee, J.W., Mackenzie, K.D., Sasserath, J.

Electrochemical Society
11 国際会議録 Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems

Hays, D., Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S.

Electrochemical Society
6 国際会議録 InGaP/GaAs BASED SINGLE AND DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS GROWN BY MOMBE

Ren, F., Abernathy, C.R., Pearton, S.J., Wisk, P.W., Esagui, R.

Materials Research Society
12 国際会議録 COMPARISON OF CURRENT-INDUCED MIGRATION OF Be AND C IN GaAs.A1GaAs HBTs

Ren, F., Fullowan, T. R., Lochian, J. R., Wisk, P.W., Abernathy, C. R., Kopf, R.F, Emerson, A. B., Downey, S. W., …

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12