LOW -TEMPERATURE PECVD Si3N4 FILMS FOR GaAs ENCAPSULATION AND PASSIVATION

LOW -TEMPERATURE PECVD Si3N4 FILMS FOR GaAs ENCAPSULATION AND PASSIVATION

著者名:

Pfeffer, R.L.

掲載資料名:

Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

165

発行年:

1990

開始ページ:

227

終了ページ:

232

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990531 [1558990534]

言語:

英語

請求記号:

M23500/165

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015649
シリーズID:	PA00000011
会議名:	Symposium on Characterization of plasma-enhanced CVD processes
回次:	1989
会議開催地:	Boston, Massachusetts, USA
会議開催年:	1989.11.27-1989.11.28

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