CHARACTERISTICS OF DOPING AND DIFFUSION OF HEAVILY DOPED N AND P TYPE InP AND InGaAs EPITAXIAL LAYERS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
- 著者名:
- 掲載資料名:
- Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 163
- 発行年:
- 1990
- 開始ページ:
- 867
- 終了ページ:
- 874
- 総ページ数:
- 8
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990517 [1558990518]
- 言語:
- 英語
- 請求記号:
- M23500/163
- 資料種別:
- 国際会議録
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