Blank Cover Image

EL-2 DEFECT FORMATIN AND CARBON INCORPORATIN IN GaAs GROWN BY ORGANOMETALLIC VAPOR PHASE EPITAXY

著者名:
掲載資料名:
Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
163
発行年:
1990
開始ページ:
831
終了ページ:
836
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990517 [1558990518]
言語:
英語
請求記号:
M23500/163
資料種別:
国際会議録

類似資料:

1 国際会議録 INTERFACE RECOMBINATION VELOCITIES IN LAYERED GaAs AND AlGaAs/GaAs STRUCTURES GROWN BY OMVPE

Bothra, S., Venkatasubramanian, R., Gandhi, S. K., Borrego, J. M.

Materials Research Society
7 国際会議録 GROWTH AND CHARACTERIZATION OF CdTe LAYERS On InSb SUBSTRATES PREPARED BY ORGANOMETALLIC EPITAXY

Bhat, I., Sundaram, L. M. G., Borrego, J. M., Gandhi, S. K.

Materials Research Society
2 国際会議録 EFFECTS OF GROWTH CONDITIONS ON EL2 CONCENTRATION IN OMVPE-GaAs

Venkatasubramanian, R., Lee, W. I., Ghanhdi, S. K., Borrego, J. M.

Materials Research Society
8 国際会議録 Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy

Shin,M., Polyakov,A.Y., Skowronski,M., Rohrer,G.S., Wilson,R.G.

Trans Tech Publications
3 国際会議録 Defect levels and inhomogeneities of high-purity high-resistivity GaAs films grown by vapor phase epitaxy

Kazukauskas,V., Kuprusevicius,E., Vaitkus,J.V., Smith,K.M., Nenonen,S.A., Owens,A.

SPIE-The International Society for Optical Engineering
9 国際会議録 Interface effects with Ga0.47In0.53 As layers on InP substrates prepared by organometallic chemical vapor deposition

Whiteley, J. S., Ghandi, S. K

North-Holland
4 国際会議録 Organometallic Vapor-Phase Lateral Epitaxy of Low Defect Density GaN Layers

Nam, O. H., Zheleva, T. S., Bremser, M. D., Thomson, D. B., Davis, R. F.

MRS - Materials Research Society
10 国際会議録 CdTe FILMS GROWN ON InSb SUBSTRATES BY ORGANO-METALLIC EPITAXY

Bhat, I. B., Taskar, N. R., Ayers, J., Patel, K., Ghandi, S. K.

Materials Research Society
5 国際会議録 OPTIMISATION OF THE HETEROEPITAXY OF Ge ON GaAs FOR MINORITY-CARRIER LIFETIME

Venkatasubramanian, R., Timmons, M. L., Bothra, S., Borrego, J. M.

Materials Research Society
11 国際会議録 Relaxed InxGa1-xAs Graded Buffers Grown With Organometallic Vapor-Phase Epitaxy on GaAs

Bulsara, M. T., Leitz, C., Fitzgerald, E. A.

MRS - Materials Research Society
6 国際会議録 Effect of Heavy Doping on the Electroluminescence of GaAs p-n Junction Grown Using Metalorganic Vapour Phase Epitaxy

Tyagi,R., Padmavati,M.V.G., Singh,M., Purohit,R.K., Agarwal,S.K.

SPIE-The International Society for Optical Engineering, Narosa
12 国際会議録 LOW-TEMPERATURE DEFECT-INDUCED AGING OF GaAs GROWN BY MOLECULAR BEAM EPITAXY

Szafranek, I., Stockman, S. A., Szafranek, M., McCollum, M. J., Plano, M. A., Miller, W. R., Stillman, G. E.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12