ANOMALOUS TRANSIENT TAIL DIFFUSION OF BORON IN SILICON: KINETIC MODELING OF DIFFUSION AND CLUSTER FORMATION

ANOMALOUS TRANSIENT TAIL DIFFUSION OF BORON IN SILICON: KINETIC MODELING OF DIFFUSION AND CLUSTER FORMATION

著者名:

掲載資料名:

Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

163

発行年:

1990

開始ページ:

605

終了ページ:

608

総ページ数:

4

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990517 [1558990518]

言語:

英語

請求記号:

M23500/163

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015647
シリーズID:	PA00000011
会議名:	Symposium on impurities, defects, and diffusion in semiconductors
回次:	1989
会議開催地:	Boston, MA, USA
会議開催年:	1989.11.27-1989.12.01

類似資料:

1 国際会議録 Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion Cowern, N.E.B., Mannino, G., Roozeboom, F., van Berkum, J.G.M, Colombeau, B., Claverie, A. Electrochemical Society	7 国際会議録 Experimental study on the mechanism of carbon diffusion in silicon Cowern, N.E.B., Colombeau, B., Roozeboom, F., Hopstaken, M., Snijders, H., Meunier-Beillard, P., Lerch, W. Materials Research Society
2 国際会議録 TRANSIENT DIFFUSION OF SOPANTS IN SILICON: PHYSICS MODELING, AND PRACTICAL SIMULATIONS Cowern, N.E.B. Electrochemical Society	8 国際会議録 5 Effect of Amorphization on Activation and Deactivation of Boron in Source/Drain, Channel and Poly Gate Pawlak, B.J., Duffy, R., Janssens, T., Vandenorst, W., Seven, S., Richard, O., Benedetti, A., Eyben, P., Colombeau, B., … Electrochemical Society
3 国際会議録 Diffusion of Ion-Implanted Boron and Silicon in Germanium Uppal, Suresh, Willoughby, A.F.W., Bonar, J.M., Cowern, N.E.B., Morris, R.J.H., Dowsett, M.G. Materials Research Society	9 国際会議録 Room-Temperature Migration of Ion-Implanted Boron in Silicon Collart, E. J. H., Weemers, K., Gravesteijn, D. J., Berkum, J. G. M. van, Cowern, N. E. B. MRS - Materials Research Society
4 国際会議録 AVOIDING TRANSIENT DIFFUSION OF BORON IN Si (100) Schreutelkamp, R.J., Lu, W.X., Saris, F.W., Janssen, K.T.F., Ottenheim, J.J.M., Kaim, R.E., Westendorp, J.F.M. Materials Research Society	10 国際会議録 Atomistic Model of Transient-Enhanced Diffusion and Clustering of Boron in Silicon Pelaz, L., Gilmer, G. H., Jaraiz, M., Gossmann, H-J., Rafferty, C. S., Eaglesham, D. J., Poate, J. M. MRS - Materials Research Society
5 国際会議録 DIFFUSION AND ACTIVATION DURING RAPID THERMAL ANNEALING OF IMPLANTED BORON IN SILICON Cowern, N.E.B., Yallup, K.J., Godfrey, D.J., Hasko, D.G., McMahon, R.A., Ahmed, H., Stobbs, W.M., McPhail, D.S. Materials Research Society	11 国際会議録 Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions Colombeau, B., Smith, A.J., Cowern, N.E.B., Pawlak, B.J., Cristiano, F., Duffy, R., Claverie, A., Ortiz, C.J., Pichler, … Materials Research Society
6 国際会議録 Transient Enhanced Diffusion and Ostwald Ripening of Ion-Implantation Generated Defects in Silicon Cowern, N.E.B., Mannino, G., Roozeboom, F., Stalk, P.A., Huizing, H.G.A., van Berkum, J.G.M, Toan, N.N., Woerlee, P.H., … Electrochemical Society	12 国際会議録 The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I.De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12