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EFFECT OF GaAs SURFACE STOICHIOMETRY ON THE INTERFACE OF AS-GROWN EPITAXIAL ZnSe/EPITAXIAL GaAs HETEROSTRUCTURES

著者名:
Qui, J.
Gunshor, R.L.
Kobayashi, M.
Menke, D.R.
Qian, Q.-D.
Li, D.
Otsuka, N.
さらに 2 件
掲載資料名:
Properties of II-VI semiconductors : bulk crystals, epitaxial films, quantum well structures, and dilute magnetic systems : symposium held November 27-December 2, 1989, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
161
発行年:
1990
開始ページ:
115
終了ページ:
120
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990494 [1558990496]
言語:
英語
請求記号:
M23500/161
資料種別:
国際会議録

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