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APPLICATION OF GaAs-A1GaAs SUPERLATTICE STRUCTURE FOR FABRICATING HIGH BREAKDOWN VOLTAGE POWER MISFET

著者名:
掲載資料名:
Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
160
発行年:
1990
開始ページ:
807
終了ページ:
810
総ページ数:
4
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990487 [1558990488]
言語:
英語
請求記号:
M23500/160
資料種別:
国際会議録

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