Blank Cover Image

LATTICE MISMATCH EFFECTS IN GaAsP/GaAs AND GaAs/GaAsP/GaAs HETEROSTRUCTURES

著者名:
掲載資料名:
Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
160
発行年:
1990
開始ページ:
789
終了ページ:
794
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990487 [1558990488]
言語:
英語
請求記号:
M23500/160
資料種別:
国際会議録

類似資料:

1 国際会議録 X-RAY STUDIES OF GaAs/Si AND ZnS/Si

Kim, H. M., Choi, Y-W., Vernon, S. M., Moise, P. S, Wie, C. R.

Materials Research Society
7 国際会議録 SIMULATION DESIGN AND DEVICE CHARACTERISTICS OF AlAs/GaAs/AlAs RESONANT TUNNELING STRUCTURES WITH A GaInAs EMITTER SPACER LAYER

Choi, Y. W., Kim, H. M., Wie, C. R.

Materials Research Society
2 国際会議録 GROWTH AND CHARACTERIZATION OF GaAs-BASED HETEROSTRUCTURES ON Si BY MOCVD

Hobson, W.S., Pearton, S.J., Short, K.T., Jones, K.S., Vernon, S.M., Jacobson, D.C., Abernathy, C.R., Caruso, R.

Materials Research Society
8 国際会議録 *Photoconductive properties of GaAs1-xNx double heterostructures as a function of excitation wavelength

Ahrenkiel, R. K., Mascarenhas, A., Johnston, S. W., Zhang, Y., Friedman, D. J., Vernon, S. M.

MRS-Materials Research Society
3 国際会議録 HETEROJUNCTION STUDY OF Ga0.92In0.8(p+)/GaAs (n) DIODES: CORRELATION OF ELECTRICAL AND STRUCTURAL CHARACTERISTICS

Choi, Y.W., Wie, C.R., Evans, K.R., Stutz, C.E.

Materials Research Society
9 国際会議録 THERMAL ANNEALING EFFECTS IN THE STRAINED (Ga,In) As LAYER

Choi, Y-W., Kim, H. M., Rajeswaran, G., Wie, C. R.

Materials Research Society
4 国際会議録 STRESS RELEASE IN ION IMPLANTED LATTICE MISMATCHED SEMICONDUCTOR HETEROSTRUCTURES

Arnold, G.W., Picraux, S.T., Myers, D.R., Doyle, B.L., Peercy, P.S., Biefeld, R.M., Dawson, L.R.

Materials Research Society
10 国際会議録 PHOTOLUMINESCENCE OF InP/GaAs/Si HETEROSTRUCTURES

Mazzi, V. P., Haegel, N. M., Vernon, S. M., Haven, V,. E,.

Materials Research Society
5 国際会議録 ACTIVATION AND INTERDIFFUSION CHARACTERISTICS IN IMPLANTED GaAs-A1GaAs HETEROSTRUCTURES ON Si

Pearton, S.J., Short, K.T., Jones, K.S., Vernon, S.M.

Materials Research Society
11 国際会議録 IMPROVEMENT OF InP-GaAs-Si QUALITY BY THERMAL-CYCLE GROWTH

Vernon, S. M., Keavney, C. J., Gagnon, E. D., Karam,. N. H., Al-Jassim. M. M., Haegel, N. M., Mazzi, V. P., Wie, C. R.

Materials Research Society
6 国際会議録 LASER STIMULATED DEPOSITION OF GaAs, GaAsP AND GaAsP-GaAS SUPERLATTICES

Karam, N.H., Bedair, S.M., El-Masry, N.A., Griffis, D.

Materials Research Society
12 国際会議録 LATTICE-MATCHED GaAs/Ca0.45Sr0.55F2.Ge(100) HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY

Tu, C. W., Beggy, J. C., Baiocchi, F. A., Abys, S. M., Pearton, S. J., Hsieh, S. J., Kopf, R. F., Caruso, R., Jordan, A. …

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12