*MATERIALS AND DEVICE CHARACTERISTICS OF PSEUDOMORPHIC A1GaAS-InGaAs-GaAs AND A1 InAs-InGaAs-InP HIGH ELECTRON MOBILITY TRANSISTORS

*MATERIALS AND DEVICE CHARACTERISTICS OF PSEUDOMORPHIC A1GaAS-InGaAs-GaAs AND A1 InAs-InGaAs-InP HIGH ELECTRON MOBILITY TRANSISTORS

著者名:

Ballingall, J.M.

掲載資料名:

Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

160

発行年:

1990

開始ページ:

759

終了ページ:

770

総ページ数:

12

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990487 [1558990488]

言語:

英語

請求記号:

M23500/160

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015644
シリーズID:	PA00000011
会議名:	Symposium on layered structures
回次:	1989
会議開催地:	Boston, MA, USA
会議開催年:	1989.11.27-1989.12.01

類似資料:

1 国際会議録 *MATERIALS AND DEVICE CHARACTERISTICS OF InAlAs/InGaAs HEMTs Ho, Pin, Kao, M.Y., Chao, P.C., Duh, K.H.G., Smith, P.M., Martin, P.A., Liu, S.M.J., Hwang, K.C., Ballingall, J.M., Yu, … Materials Research Society	7 国際会議録 InGaAs/InP Heterojunction Bipolar Transistors for Ultra Low Power Circuit Applications Chang, P.C., Baca, A.G., Hafich, M.J., Ashby, C.I. Electrochemical Society
2 国際会議録 Performance of a GaAs-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) with an Electroless-Plated Treated Gate C.C. Huang, C.C. Chen, J.K. Liou, P.C. Chou, H.I. Chen Trans Tech Publications	8 国際会議録 PHOTOLUMINESCENCE FROM 2D ELECTRON GAS AND MANY BODY EFFECTS AS A PROBE OF THE CRYSTALLINE QUALITY OF PSEUDOMORPHIC GaAs/InGaAs/AlGaAs AND … Tabata, A., Benyattou, T., Guillot, G., Moreira, M. V. Baeta, Py, M. A. MRS - Materials Research Society
3 国際会議録 High Performance InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors Nobuhito Wakimura, Yugo Nakagawa, Hirohisa Taguchi, Tsutomu Iida, Yoshifumi Takanashi Materials Research Society	9 国際会議録 Comparison of InP/InGaAs HBT and InAlAs/InGaAs HBT for ULP Applications Chang, P.C., Baca, A.G., Klem, J.F., Hafich, M.J., Ashby, C.I.H., Hietala, V.M. Electrochemical Society
4 国際会議録 X-RAY DIFFRACTION STUDY OF InA1As-InGaAs ON InP HIOGH ELECTRON MOBILITY TRANSISTOR STRUCTURE PREPARED BY MOLECULAR BEAM EPITAXY Liu, H.Y., Kao, Y.C., Kim, T.S. Materials Research Society	10 国際会議録 Carrier Dynamics in Small InAs/GaAs Quantum Dots Zurauskiene, N., Marcinkevicius, S., Janssen, G., Goovaerts, E., Bouwen, A., Koenraad, P.M., Wolter, J.H. Trans Tech Publications
5 国際会議録 Multiple Negative-Differential-Resistance (MNDR) of a Graded AlxGa1-xAs/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic InGaAs/GaAs … Liu, W.-C., Tsai, J.-H., Cheng, S.-Y., Wang, W.-C., Lin, P.-H., Chen, J.-Y. Electrochemical Society	11 国際会議録 Integration of InGaAs/InP PIN diodes with Fabry-Perot filters for wavelength-selective receivers Riemenschneider,R., Peerlings,J., Kumar,V.Naveen, Strassner,M., Pfeiffer,J., Mutamba,K., Herbst,S., Daleiden,J., … SPIE - The International Society for Optical Engineering
6 国際会議録 MATERIALS AND DEVICE CHARACTERISTICS OF MBE MICROWAVE POWER FETs WITH BUFFER LAYERS GROWN AT LOW TEMPERATURE (300°C) Ballingall, J.M., Ho, Pin, Smith, R.P., Wang, S., Tessmer, G., Yu, T., Hall, Ernest L., Hutchins, Gudrun Materials Research Society	12 国際会議録 InAs quantum dots coupled with strained InGaAs/GaAs coupled quantum-wells Mu, X., Ding, Y.J., Wang, Z., Salamo, G.J., Little, J. SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12