ATOMIC STRUCTURE AND CHEMISTRY OF Si/Ge INTERFACES DETERMINED BY E-CONTRAST STEM

ATOMIC STRUCTURE AND CHEMISTRY OF Si/Ge INTERFACES DETERMINED BY E-CONTRAST STEM

著者名:

掲載資料名:

Atomic scale structure of interfaces : symposium held November 27-29, 1989, Boston Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

159

発行年:

1990

開始ページ:

447

終了ページ:

452

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990470 [155899047X]

言語:

英語

請求記号:

M23500/159

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015643
シリーズID:	PA00000011
会議名:	Symposium on atomic scale structure of interfaces
回次:	1989
会議開催地:	Boston, MA, USA
会議開催年:	1989.11.27-1989.1129

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