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REACTIVE ION ETCHING OF In-BASED III-V SEMICONDUCTORS COMPARISON OF Cl AND C2H6 CHEMISTRIES

著者名:
掲載資料名:
In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
158
発行年:
1990
開始ページ:
417
終了ページ:
424
総ページ数:
8
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990463 [1558990461]
言語:
英語
請求記号:
M23500/158
資料種別:
国際会議録

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