LOW TEMPERATURE INTERLEVEL SiO2 LAYERS BY PHOTOINDUCED PROCESSING

LOW TEMPERATURE INTERLEVEL SiO2 LAYERS BY PHOTOINDUCED PROCESSING

著者名:

掲載資料名:

In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

158

発行年:

1990

開始ページ:

273

終了ページ:

280

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990463 [1558990461]

言語:

英語

請求記号:

M23500/158

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015642
シリーズID:	PA00000011
会議名:	Symposium on in-situ patterning
回次:	1989
会議開催地:	Boston, MA, USA
会議開催年:	1989.11.29-1989.12.01

類似資料:

1 国際会議録 A LOW-TEMPERATURE PROCESS FOR DEVICE QUALITY Si/SiO2 INTERFACES ON Si(111) Yasuda, T., Lee, D. R., Bjorkman, C. H., Ma, Y., Lucovsky, G., Emmerichs, U., Meyer, C., Leo, K., Kurz, H. MRS - Materials Research Society	7 国際会議録 LOW-TEMPERATURE DEVICE-QUALITY SiO2/Si (100) INTERFACES PREPARED BY A COMBINED REMOTE PLASMA OXIDATION-DEPOSITION PROCESS Yasuda, T., ma, Y., Lucovsky, G. Materials Research Society
2 国際会議録 TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature Kang, H. H., Salamanca-Riba, L., Pinczolits, M., Springholz, G., Holy, V., Bauer, G. MRS-Materials Research Society	8 国際会議録 Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature … Lucovsky,G., Niimi,H. Trans Tech Publications
3 国際会議録 IMPROVED ADHESION OF P-DOPED SiO2-INTERFACE LAYERS ON InP BY LOW-TEMPERATURE DAMAGE-FREE PLASMA-CVD Riemenschneider, R., Hartnagel, H. L., Krautle, H. MRS - Materials Research Society	9 国際会議録 Physical Properties of SiO2 Layers Deposited at Room Temperature by a Combination of ECR Plasma and High-Speed Jet of Silane Isai, G., Holleman, J., Woerlee, P., Wallinga, H., Modreanu, M., Cobianu, C. Electrochemical Society
4 国際会議録 Low-Temperature (450｡？ Poly-Si Thin Film Deposition on SiO2 and Glass Using a Microcrystalline-Si Seed Layer Wolfe, D. M., Wang, F., Lucovsky, G. MRS - Materials Research Society	10 国際会議録 Fictive temperature dependence of photoinduced defects in Ge: SiO2 glass Horiuchi, N., Saito, K., Ikushima, A.J. SPIE-The International Society for Optical Engineering
5 国際会議録 Low-Temperature Formation of Ultrathin SiO2 Layers Using Direct Oxidation Method in a Catalytic Chemical Vapor Deposition System Izumi, A., Sohara, S., Kudo, M., Matsumura, H. MRS - Materials Research Society	11 国際会議録 Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers Coffin, H., Bonafos, C., Schamm, S., Cherkashin, N., Respaud, M., Ben-Assayag, G., Dimitrakis, P., Normand, P., Tence, … Materials Research Society
6 国際会議録 Hydrogen in Buried SiO2 Layers Revesz, A.G., Stahlbush, R.E., Hughes, H.L. Electrochemical Society	12 国際会議録 Fast Process Setup Times for Sputtered Dielectric Beam Splitters with TiO₂ and SiO₂ Layers Using Computer-Aided Recalculation H.G. Lotz, J. Trube, A. Zmelty Society of Vacuum Coaters

1

2

3

4

5

6

7

8

9

10

11

12