ION IMPLANTATION INDUCED EFFECTS AT POLYSILICON GATE FEATURE EDGES

ION IMPLANTATION INDUCED EFFECTS AT POLYSILICON GATE FEATURE EDGES

著者名:

掲載資料名:

Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

157

発行年:

1990

開始ページ:

733

終了ページ:

738

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990456 [1558990453]

言語:

英語

請求記号:

M23500/157

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015641
シリーズID:	PA00000011
会議名:	Symposium on beam-solid interactions
回次:	1989
会議開催地:	Boston, MA, USA
会議開催年:	1989.11.27-1989.12.01

類似資料:

1 国際会議録 SILICON CONSUMPTION DURING SELF-ALIGNED TITANIUM SILICIDE FORMATION ON SHALLOW JUNCTIONS Smith, P.L., Osburn, C.M., Wen, D.S., McGuire, G. Materials Research Society	7 国際会議録 Effect of Multipass Hot Deformation on Recrystallization Kinetics,Strength and Softening of Al-1Mg during Thermomechanical Processing Orsetti-Rossi,P.L., Sellars,C.M. Trans Tech Publications
2 国際会議録 EFFECTS OF SILICON ION IMPLANTATION UPON THIN GATE OXIDE INTEGRITY Lee, G.-S., Park, J. -G., Choi, S. -P., Shin, C.-H,, Sun, Y.-B, Kwak, Y.-S., Shin, C.-K., Smith, W. L., Hahn, S. Materials Research Society	8 国際会議録 RTP for Advanced Device Fabrication using Shallow, Elevated, and Silicided Junctions Osburn, C.M. Electrochemical Society
3 国際会議録 Wear-Out and Stress-Induced Leakage Current of Ultrathin Gate Oxides Thees, H.-J., Osburn, C.M., Shiely, J.P., Massoud, H.Z. Electrochemical Society	9 国際会議録 A 0.25mm MOSFET Technology Using In-Situ Rapid Thermal Gate Dielectrics Zhang, K.X., Osburn, C.M., Hames, G., Parker, C., Bayoumi, A. Electrochemical Society
4 国際会議録 Response-surface-based optimization of 0.1-ｦﾌm PMOSFETs with ultrathin gate stack dielectrics Srivastava,A., Osburn,C.M. SPIE-The International Society for Optical Engineering	10 国際会議録 Effect of Post Metallization Annealing for Alternative Gate Stack Devices Kim, I., Finn, S.K., Osburn, C.M. Electrochemical Society
5 国際会議録 Static Recrystallization of Al-1Mg during Thermomechanical Processing Orsetti-Rossi,P.L., Sellars,C.M. Trans Tech Publications	11 国際会議録 Integration Issues with High k Gate Stacks* Osburn, C.M., Han, S.K., Kim, I., Campbell, S.A., Garfunkel, E., Gustafson, T., Hauser, J., King, T.-J., Liu, Q., … Electrochemical Society
6 国際会議録 Etching of High-k Gate Dielectrics and Gate Metal Candidates Han, S.K, Kim, I., Zhong, H, Heuss, G.P., Lee, J.H, Wicairsana, D., Maria, J.P., Misra, V., Osburn, C.M. Electrochemical Society	12 国際会議録 THE ENERGY DEPENDENCE OF ION DAMAGE IN AlxGa1-xAs/GaAs HETEROSTRUCTURES AND THE EFFECTS OF IMPLANTED IMPURITY Cullis, A. G., Jacobson, D. C., Polman, A., Smith, P. W., Poate, J. M., Whitehouse, C. R Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12