ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF GeXSi1-X/Si HETEROSTRUCTURES
- 著者名:
- 掲載資料名:
- Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 157
- 発行年:
- 1990
- 開始ページ:
- 105
- 終了ページ:
- 112
- 総ページ数:
- 8
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990456 [1558990453]
- 言語:
- 英語
- 請求記号:
- M23500/157
- 資料種別:
- 国際会議録
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The Effect of Ion-Implantation-Induced Defects on Strain Relaxation in GexSi1-x/Si Heterostructures
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