DEFECTS AND STRAIN IN GeXSi1-X/Si LAYERS GROWN BY RAPID THERMAL PROCESSING CHEMCIAL VAPOR DEPOSITION

DEFECTS AND STRAIN IN GeXSi1-X/Si LAYERS GROWN BY RAPID THERMAL PROCESSING CHEMCIAL VAPOR DEPOSITION

著者名:

掲載資料名:

Chemistry and defects in semiconductor heterostructures

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

148

発行年:

1989

開始ページ:

335

終了ページ:

340

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990210 [1558990216]

言語:

英語

請求記号:

M23500/148

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015633
シリーズID:	PA00000011
会議名:	Symposium on Chemistry and Defects in Semiconductor Heterostructures ; MRS Spring Meeting
回次:	1989
会議開催地:	San Diego, CA, USA
会議開催年:	1989.04.24-1989.04.27

類似資料:

1 国際会議録 GeXSi1-X LAYERS GROWN BY RAPID THERMAL PROCESSING CHEMICCAL VAPOR DEPOSTIION Jung, K. H., Kim, Y. M., Chun, H, G., Kwong, D. L., Rabenberg, L. Materials Research Society	7 国際会議録 GENERATION OF DEFECTS AND STRAIN BY ION IMPLANTATION IN Ge(100) SINGLE CRYSTALS, AND IN PSEUDOMORPHIC GeXSi1-X FILMS GROWN ON Si(100) Lie, D. Y. C., Vantomme, A., Eisen, F., Nicolet, M.-A., Arbet-Engets, V., Wang, K. L. Materials Research Society
2 国際会議録 GexSi1-x WAVEGUIDES GROWN BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION Jung, K.H., Mayer, R.A., Hsieh, T.Y., Campbell, J.C., Kwong, D.L. Materials Research Society	8 国際会議録 THE DEPENDENCE OF DEFECT DENSITY IN GeXSi1-X/Si HETEROSTRUCTURES GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION ON DEPOSITION PARAMETERS Kinosky, D., Qian, R., Hsu, T., Irby, J., Mahajan, A., Thomas, S., Banerjee, S., Tasch, A., Magee, C., Grove, C. L. Materials Research Society
3 国際会議録 Si AND GeSi1-x EPITAXIAL GROWTH ON SOI STRUCTURES BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION Hseih, T. Y., Jung, K. H., Kwong, D. L., Lin, S., Marcus, H. L. Materials Research Society	9 国際会議録 HIGH QUALITY Si AND Si1-XGeX FILMS AND HETEROJUNCTION BIPOL;AR TRANSISTORS GROWN BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD) Green, M. L., Brasen, D., Temkin, H., Kannan, V. C., Luftman, H. S. Materials Research Society
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5 国際会議録 REACTION KINETICS OF SPUTTER-DEPOSITED Ti ON Si02 SUBSTRATES DURING RAPID THERMAL ANNEALING Yun, E. J., Chun, H. G., Jung, K., Kwong, D. L., Lee, S. Materials Research Society	11 国際会議録 GROWTH AND HIGH RESOLUTION TEM CHARACTERIZATION OF GexSi1-x/Si HETERO-STRUCTURES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION Qian, R., Chung, I., Kinosky, D., Hsu, T., Irby, J., Mahajan, A., Thomas, S., Banerjee, S., Tasch, A., Rabenberg, L., … Materials Research Society
6 国際会議録 WELL-RESOLVED BAND-EDGE PHOTOLUMINESCENCE FROM STRAINED Si1-xGex LAYERS GROWN BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION Sturm, J.C., Schwartz, P.V., Manoharan, H., Mi, Q., Lenchyshyn, L.C., Thewalt, M.L.W., Rowell. N.L., Noel, J.-P., … Materials Research Society	12 国際会議録 Defect-Free Band-Edge Photoluminescence in SiGeC Strained Layers Grown by Rapid Thermal Chemical Vapor Deposition Liu, C. W., Amour, A. St., Sturm, J. C., Lacroix, Y. R. J., Thewalt, M. L. W. MRS - Materials Research Society

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