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EFFECT OF STRAIN AND INTERFACE INTERDIFFUSION ON THE VALENCE BAND OFFSET AT Si/Ge INTERFACES

著者名:
Hybertsen, Mark S.  
掲載資料名:
Chemistry and defects in semiconductor heterostructures
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
148
発行年:
1989
開始ページ:
329
終了ページ:
334
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990210 [1558990216]
言語:
英語
請求記号:
M23500/148
資料種別:
国際会議録

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