ELECTRICAL PROPERTIES OF THIN INTERMETALLIC PLATINUM-GALLIUM FILMS GROWN BY MBE ON GALLIUM ARSENIDE AND SILICON

ELECTRICAL PROPERTIES OF THIN INTERMETALLIC PLATINUM-GALLIUM FILMS GROWN BY MBE ON GALLIUM ARSENIDE AND SILICON

著者名:

掲載資料名:

Chemistry and defects in semiconductor heterostructures

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

148

発行年:

1989

開始ページ:

291

終了ページ:

296

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990210 [1558990216]

言語:

英語

請求記号:

M23500/148

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015633
シリーズID:	PA00000011
会議名:	Symposium on Chemistry and Defects in Semiconductor Heterostructures ; MRS Spring Meeting
回次:	1989
会議開催地:	San Diego, CA, USA
会議開催年:	1989.04.24-1989.04.27

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