Blank Cover Image

DIFFUSION, SEGREGATION, AND RECRYSTALLIZATION IN HIGH-DOSE ION-IMPLANTED Si

著者名:
Pennycook, S. J.  
掲載資料名:
Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
147
発行年:
1989
開始ページ:
45
終了ページ:
52
総ページ数:
8
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990203 [1558990208]
言語:
英語
請求記号:
M23500/147
資料種別:
国際会議録

類似資料:

1 国際会議録 PRECIPITATION, PHASE TRANSFORMATION, AND ENHANCED DIFFUSION IN ION-IMPLANTED SILICON

Pennycook, S. J., Culbertson, R. J., Berger, S. D.

Materials Research Society
7 国際会議録 FORMATION OF STABLE POINT DEFECTS IN ION-IMPLANTED Si

Culbertson, R.J., Pennycook, S.J.

Materials Research Society
2 国際会議録 TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON

Pennycook, S. J., Narayan, J., Culbertson, R. J.

Materials Research Society
8 国際会議録 AMORPHOUS TO POLYCRYSTALLINE TRANSFORMATION IN HIGH DOSE ION IMPLANTED SILICON

Nygren, E., McCallum, J. C., Thornton, R., Williams, J. S., Olson, G. L.

Materials Research Society
3 国際会議録 CHARACTERIZATION AND EVOLUTION OF MICROSTRUCTURES FORMED BY HIGH DOSE OXYGEN IMPLANTATION OF SILICON

El-Ghor, M.K., Pennycook, S.J., Sjoreen, T.P., Narayan, J.

Materials Research Society
9 国際会議録 STUDY OF TITANIUM NITRIDES SYNTHESIZED BY HIGH DOSE ION IMPLANTATION

Guemmaz, M, Mosser, A., Raiser, D., Grob, J. J., Cornet, A., Paletto, S.

MRS - Materials Research Society
4 国際会議録 TRANSIENT ENHANCED DIFFUSION IN B+ AND P+ IMPLANTED SILICON

Pennycook, S.J., Culbertson, R.J.

Materials Research Society
10 国際会議録 ION IMPLANTATION OF HIGH DOSES OF Co IN Si1-xGex ALLOYS

Lauwers, A., Maex, K., Vandervorst, W., Brijs, G., Poortmans, J., Caymax, M., Vanhellemont, J., Petersson, S.

Materials Research Society
5 国際会議録 FORMATION OF NIOBIUM CARBIDES IN HIGH-DOSE CARBON-ION-IMPLANTED AND ANNEALED NIOBIUM

Huang, J.S.

Materials Research Society
11 国際会議録 HIGH RESOLUTION Z-CONTRAST IMAGING AND LATTICE LOCATION ANALYSIS OF DOPANTS IN ION-IMPLANTED SILICON

Pennycook, S. J., Narayan, J., Culbertson, R. J., Pogarassy, E., Batson, P. E.

Materials Research Society
6 国際会議録 TRAPPING OF INTERSTITIALS DURING ION IMPLANTATION IN SILICON

Culbertson, R.J., Pennycook, S.J.

Materials Research Society
12 国際会議録 THE PRODUCTION OF POROUS STRUCTURES ON Si, Ge AND GaAs BY HIGH DOSE ION IMPLANTATION

Williams, J. S., Chivers, D. J., Elliman, R. G., Johnson, S. T., Lawson, E. M., Mitchell, I. V., Orrman-Rossiter, K. G., …

North-Holland
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12