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PROCESS UNIFORMITY AND ELECTRICAL CHARACTERISTICS OF THIN GATE DIELECTRICS GROWN BY RANOED-TEMPERATURE TRANSIENT RAPID THERMAL OXIDATION OF SILICON

著者名:
掲載資料名:
Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
146
発行年:
1989
開始ページ:
319
終了ページ:
326
総ページ数:
8
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990197 [1558990194]
言語:
英語
請求記号:
M23500/146
資料種別:
国際会議録

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