MBE GROWTH OF InAs AND GaSb EPITAXIAL LAYERS ON GaAs SUBSTRATES
- 著者名:
- 掲載資料名:
- III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 145
- 発行年:
- 1989
- 開始ページ:
- 409
- 終了ページ:
- 414
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990180 [1558990186]
- 言語:
- 英語
- 請求記号:
- M23500/145
- 資料種別:
- 国際会議録
類似資料:
Plenum Press |
7
国際会議録
Compositional variations in MBE grown InAs-GaSb superlattices for infrared detector applications
SPIE - The International Society of Optical Engineering |
2
国際会議録
INFRARED PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE FROM InAs/Ga1-XinXSb STRAINED-LAYER SUPERLATTICES
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
MRS-Materials Research Society |
Materials Research Society |
Trans Tech Publications |
6
国際会議録
Nucleation and Growth of Gallium Nitride Films on Si and Sapphire Substrates Using Buffer Layers
MRS - Materials Research Society |
Materials Research Society |