HIGH 2DEG MOBILITY AND FABRICATION OF HIGH PERFORMANCE A1GaAs/GaAs SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTORS AND RING OSCILLATORS ON Si SUBSTRATES

HIGH 2DEG MOBILITY AND FABRICATION OF HIGH PERFORMANCE A1GaAs/GaAs SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTORS AND RING OSCILLATORS ON Si SUBSTRATES

著者名:

掲載資料名:

III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

145

発行年:

1989

開始ページ:

287

終了ページ:

296

総ページ数:

10

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990180 [1558990186]

言語:

英語

請求記号:

M23500/145

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015630
シリーズID:	PA00000011
会議名:	III-V Heterostructures for Electronic/Photonic Devices : Symposium
回次:	1989
会議開催地:	San Diego, CA, USA
会議開催年:	1989.04.24-1989.04.27

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