A RECESSED-GATE In0.52A10.48As/ +-In0.53gA0.47 AS MISFET

A RECESSED-GATE In0.52A10.48As/ +-In0.53gA0.47 AS MISFET

著者名:

掲載資料名:

Advances in materials, processing, and devices in III-V compound semiconductors

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

144

発行年:

1989

開始ページ:

659

終了ページ:

664

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990173 [1558990178]

言語:

英語

請求記号:

M23500/144

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015629
シリーズID:	PA00000011
会議名:	Advances in Materials, Processing, and Devices in III-V Compound Semiconductors : Symposium
回次:	1988
会議開催地:	Boston, MA, USA
会議開催年:	1988.11.28-1998.12.02

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2 国際会議録 Study of P-type carbon doping on In0.53Ga0.47As, In0.52Al0.2Ga0.28As, and In0.52Al0.48As Yan, J., Ru, G., Gong, Y., Choa, F.-S. SPIE - The International Society of Optical Engineering	8 国際会議録 STUDIES OF In0.53Ga0.47As/InP SUPERLATTICES MIXING AND CONVERSION Schwarz, S. A., Mei, P., Hwang, D. M., Schwartz, C. L., Venkatesan, T., Palmstrom, c. J., Stoffel, N. G., Bhat, R. Materials Research Society
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