ION BEAM PROCESSING OF GaAs AT ELEVATED TEMPERATURES

ION BEAM PROCESSING OF GaAs AT ELEVATED TEMPERATURES

著者名:

掲載資料名:

Advances in materials, processing, and devices in III-V compound semiconductors

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

144

発行年:

1989

開始ページ:

355

終了ページ:

360

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990173 [1558990178]

言語:

英語

請求記号:

M23500/144

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015629
シリーズID:	PA00000011
会議名:	Advances in Materials, Processing, and Devices in III-V Compound Semiconductors : Symposium
回次:	1988
会議開催地:	Boston, MA, USA
会議開催年:	1988.11.28-1998.12.02

類似資料:

1 国際会議録 ION BEAM INDUCED AMORPHIZATION AND CRYSTALLIZATION PROCESSES IN SILICON AND GaAs Elliman, R.G., Williams, J.S., Johnson, S.T., Nygren, E. Materials Research Society	7 国際会議録 CHARACTERIZATION OF STRUCTURAL CHANGES AND DEFECTS IN ION BOMBARDED GaAs Johnson, Stephen T., Williams, J. S., Elliman, R. G., Pogany, A. P., Nygren, E., Olson, G. L. Materials Research Society
2 国際会議録 Electron and ion beam-enhanced adhesion Mitchell, I. V., Williams, J. S., Sood, D. K., Short, K. T., Johnson, S., Elliman, R. G. North-Holland	8 国際会議録 *THE KINETICS AND MICROSTRUCTURE OF ION BEAM INDUCED CRYSTALLIZATION OF SILICON Williams, J. S., Brown, W. L., Elliman, R. G., Knoell, R. V., Maher, D. M., Seidel, T. E. Materials Research Society
3 国際会議録 ION BEAN INDUCED REGROWTH IN GaAs Johnson, S. T., Williams, J. S., Nygren, E., Elliman, R. G. Materials Research Society	9 国際会議録 Elevated Temperature Implantation of GaAs with Si Ions Brown, R. A., Williams, J. S. MRS - Materials Research Society
4 国際会議録 THE PRODUCTION OF POROUS STRUCTURES ON Si, Ge AND GaAs BY HIGH DOSE ION IMPLANTATION Williams, J. S., Chivers, D. J., Elliman, R. G., Johnson, S. T., Lawson, E. M., Mitchell, I. V., Orrman-Rossiter, K. G., … North-Holland	10 国際会議録 Elevated-Temperature Implantation of GaAs With Si Ions Brown, R. A., Williams, J. S. MRS - Materials Research Society
5 国際会議録 MeV ION BEAM APPLICATIONS IN III-V SEMICONDUCTORS Elliman, R.G., Ridgway, M.C., Johnson, S.T., Williams, J.S. Materials Research Society	11 国際会議録 *KINETICS, MICROSTRUCTURE AND MECHANISMS OF ION BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF SEMICONDUCTORS Elliman, R.G., Williams, J.S., Maher, D.M., Brown, W.L. Materials Research Society
6 国際会議録 ION-BEAM-INDUCED DAMAGING AND DYNAMIC ANNELAING PROCESSES IN SILICON Short, K. T., Chivers, D. J., Elliman, R. G., Liu, J., Pogany, A. P., Wagenfeld, H. K., Williams, J. S. North-Holland	12 国際会議録 BURIED AMORPHOUS LAYER IN GALLIUM ARSENIDE Sengupta, D., Ridgway, M.C., Zemanski, J.M., Johnson, S.T. Materials Research Society

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