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MATERIAL AND DEVICE PROPERTIES ON 3" DIAMETER GaAs-ON-Si WITH BURIED P--TYPE LAYERS

著者名:
Pearton, S. J.
Lee, K. M.
Haegel, N. M.
Huang, c.-J.
Nakahara, S.
Ren. F.
Scarpelli, V.
Short, K. T.
Vernon, S. M.
さらに 4 件
掲載資料名:
Advances in materials, processing, and devices in III-V compound semiconductors
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
144
発行年:
1989
開始ページ:
317
終了ページ:
322
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990173 [1558990178]
言語:
英語
請求記号:
M23500/144
資料種別:
国際会議録

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