HETEROEPITAXY ON GaAs ON Si AND Ge BY LOW-ENERGY ION BEAM DEPOSITION USING ALTERNATING BEAMS
- 著者名:
- 掲載資料名:
- Advances in materials, processing, and devices in III-V compound semiconductors
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 144
- 発行年:
- 1989
- 開始ページ:
- 311
- 終了ページ:
- 316
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990173 [1558990178]
- 言語:
- 英語
- 請求記号:
- M23500/144
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
Materials Research Society |
Materials Research Society |
8
国際会議録
ION BEAM MODIFICATION OF FILM STRESS AND THE EFFECTIVENESS OF THIN FILM ENCAPSULANTS ON GaAs
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Society of Photo-optical Instrumentation Engineers |
6
国際会議録
GROWTH OF EPITAXIAL SiC LAYERS ONTO ON- AND OFF-AXIS 6H-SiC SUBSTRATES BY ION BEAM DEPOSITION
Materials Research Society |
Kluwer Academic Publishers |