*GaAs ON Si GROWN BY MBE: PROGRESS AND APPLICATIONS FOR SELECTIVITY DOPED HETEROJUNCTION TRANSISTORS (SDHTs)
- 著者名:
- 掲載資料名:
- Advances in materials, processing, and devices in III-V compound semiconductors
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 144
- 発行年:
- 1989
- 開始ページ:
- 251
- 終了ページ:
- 266
- 総ページ数:
- 16
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990173 [1558990178]
- 言語:
- 英語
- 請求記号:
- M23500/144
- 資料種別:
- 国際会議録
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10
国際会議録
In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
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