HEAVILY-DOPED n+-GaAs WITH LOW COMPENSATION GROWN BY ATMOSPHERIC OMVPE

HEAVILY-DOPED n+-GaAs WITH LOW COMPENSATION GROWN BY ATMOSPHERIC OMVPE

著者名:

掲載資料名:

Advances in materials, processing, and devices in III-V compound semiconductors

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

144

発行年:

1989

開始ページ:

67

終了ページ:

72

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990173 [1558990178]

言語:

英語

請求記号:

M23500/144

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015629
シリーズID:	PA00000011
会議名:	Advances in Materials, Processing, and Devices in III-V Compound Semiconductors : Symposium
回次:	1988
会議開催地:	Boston, MA, USA
会議開催年:	1988.11.28-1998.12.02

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