ON THE ORIGIN OF THE NEW ELECTRON TRAPS INDUCED BY RAPID THERMAL ANNEALING IN GaAs USING CAPPING PROXIMITY TECHNIQUE

ON THE ORIGIN OF THE NEW ELECTRON TRAPS INDUCED BY RAPID THERMAL ANNEALING IN GaAs USING CAPPING PROXIMITY TECHNIQUE

著者名:

掲載資料名:

Advances in materials, processing, and devices in III-V compound semiconductors

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

144

発行年:

1989

開始ページ:

27

終了ページ:

32

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990173 [1558990178]

言語:

英語

請求記号:

M23500/144

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015629
シリーズID:	PA00000011
会議名:	Advances in Materials, Processing, and Devices in III-V Compound Semiconductors : Symposium
回次:	1988
会議開催地:	Boston, MA, USA
会議開催年:	1988.11.28-1998.12.02

類似資料:

1 国際会議録 SPECTROSCOPIC INVESTIGATION OF ARSENIC-INDUCED SURFACE DEFECTS IN HIGH-DOSE As+ IMPLANTED RAPID THERMAL ANNEALED SILICON Kumar, R., Chaussemy, G., Roura, P., Laugier, A. Materials Research Society	7 国際会議録 DEEP DONOR AND ACCEPTOR LEVELS INDUCED BY HIGH TEMPERATURE AND LONG TIME ANNEALING IN LEC GALLIUM ARSENIDE Marrakchi, G., Kalboussi, A., Guillot, G., Ben Salem, M., Maaref, H., Molva, E. Materials Research Society
2 国際会議録 A COMPARATIVE STUDY OF DIFFERENT RAPID ANNEALING TECHNIQUES ON ELECTRICALLY ACTIVE DEFECTS IN UNIMPLANTED GALLIUM ARSENIDE Marrakchi, G., Guillot, G., Nouailhat, A. Materials Research Society	8 国際会議録 Optimization of pulsed annealing techniques for GaAs integrated circuits Martin, G.M., Mitonneau, A., Cathelin, M., Makram-Ebeid, S., Venger, C., Barbier, D., Laugier, A. North Holland
3 国際会議録 ARSENIC REDISTRIBUTION AND OUTDIFFUSION IN IMPLANTED CZOCHRALSKI-GROWN P-TYPE SILICON DURING RAPID THERMAL ANNEALING Chaussemy, G., Canut, B., Kumar, S. N., Barbier, D., Laugier, A. Materials Research Society	9 国際会議録 DEFECT STATES INDUCED BY RAPID THERMAL ANNEALING IN VIRGIN OR IMPLANTED CZOCHRALSKY-GROWN SILICON Remram, M., Barbier, D., Joly, J.?F., Laugier, A. Materials Research Society
4 国際会議録 ANGLE RESOLVED XPS ANALYSIS OF SURFACE REGION DEFECTS IN RAPID THERMAL ANNEALED ANTIMONY IMPLANTED SILICON Kumar, S.N., Chaussemy, G., Laugier, A., Canut, B., Charbonnier, M. Materials Research Society	10 国際会議録 PULSED ELECTRON BEAM ANNEALING INDUCED DEEP LEVEL DEFECTS IN VIRGIN SILICON Barbier, D., Kechouane, M., Chantre, A., Laugier, A. North-Holland
5 国際会議録 IMPLANTED IMPURITY INCORPORATION AND SEGREGATION PHENOMENA INDUCED BY PEBA IN SILICON Chaussemy, G., Barbier, D., Laugier, A. Materials Research Society	11 国際会議録 Electrical and optical properties of Yb, Er doped GaAs Benyattou, T., Seghier, D., Bremond, G., Moneger, S., Kalboussi, A., Marrakchi, G., Guillot, G., Lhomer, C., Lambert, … MRS - Materials Research Society
6 国際会議録 THEORETICAL ANALYSIS OF HOMOGENEITY AND SURFACE DEGRADATION DURING PULSED ELECTRON BEAN ANNEALING OF GaAs AND InP Laugier, A., Barbier, D., Chemisky, G. North-Holland	12 国際会議録 A STUDY OF ELECTRICALLY ACTIVE DEFECTS INDUCED BY PULSED-ELECTRON-BEAM ANNEALING IN (100) N-TYPE VIRGIN SILICON Doghmane, M. S., Barbier, D., Laugier, A. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12