THE EFFECT OF RAPID THERMAL ANNEALING ON THE DISLOCATION STRUCTURE OF SILICON ON SAPPHIRE

THE EFFECT OF RAPID THERMAL ANNEALING ON THE DISLOCATION STRUCTURE OF SILICON ON SAPPHIRE

著者名:

掲載資料名:

Characterization of the structure and chemistry of defects in materials : symposium held November 28-December 3, 1988, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

138

発行年:

1989

開始ページ:

373

終了ページ:

378

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990111 [1558990119]

言語:

英語

請求記号:

M23500/138

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015623
シリーズID:	PA00000011
会議名:	Symposium on characterization of the structure and chemistry of defects in materials
回次:	1988
会議開催地:	Boston, MA, USA
会議開催年:	1988.11.28-1988.12.03

類似資料:

1 国際会議録 IN-SITU RAPID THERMAL ANNEALING OF HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY Cerullo, M., Phillips, J. M., Anzlowar, M., Pfeiffer, L., Batstone, J.L, Galiano, M. Materials Research Society	7 国際会議録 *THE ELECTRONIC PROPERTIES OF EPITAXIAL CALCIUM FLUORIDE-SILICON STRUCTURES Smith, III, T.P., Phillips, J.M., People, R., Gibson, J.M., Pfeiffer, L., Stiles, P.J. Materials Research Society
2 国際会議録 THE EFFECT OF RAPID THERMAL ANNEALING ON HETEROEPITAXIAL STRUCTURES Phillips, J. M., Batsone, J. L., Pfeiffer, L. Materials Research Society	8 国際会議録 STUDIES OF THE EFFECT OF RAPID THERMAL ANNEALING ON THE STRUCTURAL AND ELECTRICAL PROPERTIES OF THE HETEROEPITAXIAL CaF2/CoSi2/Si(111) STRUCTURES Phillips, Julia M., Hensel, J.C., Joy, D.C., Augustyniak, W.M. Materials Research Society
3 国際会議録 IN-SITU RAPID THERMAL ANNEALING OF HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY Cerullo, M., Phillipis, Julia M., Anzlowar, M., Pfeiffer, L., Batstone, J. L., Galiano, M. Materials Research Society	9 国際会議録 MICROSTRUCTURAL CHARACTERIZATION OF HIGH DOSE OXYGEN IMPLANTED SILICON Batstone, J.L., White, Alice E., Short, K..T., Gibson, J.M., Jacobson, D.C. Materials Research Society
4 国際会議録 IMPROVING THE STRUCTURAL AND ELECTRICAL PROPERTIES OF EPITAXIAL CaF2 ON Si BY RAPID THERMAL ANNEALING Phillips, J.M., Manger, M.L., Pfeiffer, L., Joy, D.C., Smith III, T.P., Augustyniak, W.M., West, K.W. Materials Research Society	10 国際会議録 RECONSTRUCTION OF (100) SILICON/DISILICIDE INTERFACES Loretto, D., Gibson, J.M., White, Alice E., Short, K.T., Tung, R.T., Yalisove, S.M., Batstone, J.L. Materials Research Society
5 国際会議録 EFFECT OF ATOMIC STRUCTURE AT THE EPITAXIAL CaF2/Si(111) INTERFACE ON ELECTRICAL PROPERTIES Batstone, J. L., Phillips, Julia M., Hunke, E. C. Materials Research Society	11 国際会議録 IMPROVING THE QUALITY OF A HETEROEPITAXIAL CaF2 OVERLAYER BY RAPID POST ANNEALING Pfeiffer, L., Phillips, J. M., Smith III, T. P., Augustyniak, W. M., West, K. W. Materials Research Society
6 国際会議録 *NEW DIRECTIONS IN THE GROWTH OF EPITAXIAL INSULATORS AND METALS ON SILICON Phillips. Julia M., Batstone, J.L., Hensel, J.C. Materials Research Society	12 国際会議録 TEMPERATURE DEPENDENCE OF RAPID THERMAL ANNEALING OF SILICON ON SAPPHIRE Richmond, E. D., Campisi, G., Twigg, M. Materials Research Society

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