CHARACTERIEATION OF DEFECTS IN SILICON BY TRANSMISSION ELECTRON MICROSCOPY AFTER CMOS AND BIPOLAR PROCESSING

CHARACTERIEATION OF DEFECTS IN SILICON BY TRANSMISSION ELECTRON MICROSCOPY AFTER CMOS AND BIPOLAR PROCESSING

著者名:

掲載資料名:

Characterization of the structure and chemistry of defects in materials : symposium held November 28-December 3, 1988, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

138

発行年:

1989

開始ページ:

245

終了ページ:

248

総ページ数:

4

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990111 [1558990119]

言語:

英語

請求記号:

M23500/138

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015623
シリーズID:	PA00000011
会議名:	Symposium on characterization of the structure and chemistry of defects in materials
回次:	1988
会議開催地:	Boston, MA, USA
会議開催年:	1988.11.28-1988.12.03

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