Blank Cover Image

CHANGES IN THE DENSITY OF STATES IN a-Si:H WITH THE GENERATION AND ANNEALING OF LIGHT-INDUCED DEFECTS

著者名:
掲載資料名:
Amorphous silicon technology : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
118
発行年:
1988
開始ページ:
147
終了ページ:
152
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837883 [093183788X]
言語:
英語
請求記号:
M23500/118
資料種別:
国際会議録

類似資料:

1 国際会議録 ELECTRONIC TRANSPORT AND THE DENSITY OF STATES DISTRIBUTION IN a-(Si,Ge):H,F ALLOYS

Aljishi, S., Smith, Z.E., Slobodin, D., Kolodzey, J., Chu, V., Schwarz, R., Wagner, S.

Materials Research Society
7 国際会議録 ANNEALING THE DEFECTS IN a-Si:H UNDER ILLUMINATION

Gleskova, H., Morin, P.A., Wagner, S.

Materials Research Society
2 国際会議録 Is Thermal and Light-Induced Annealing of Metastable Defects in a-Si:H Driven by Electrons?

Gleskova, H., Wagner, S.

MRS - Materials Research Society
8 国際会議録 RELATION BETWEEN DEFECT DENSITY AND CONDUCTIVITY CHANGES WITH LIGHT-SOAKING AND ANNEALING IN a-Si:H

Shimizu, T., Iwami, M., Okagawa, T., Morimoto, A., Kumeda, M.

Materials Research Society
3 国際会議録 MEASUREMENTS OF LIGHT-INDUCED DEGRADATION IN a-Si, Ge:H,F ALLOYS

Kolodzey, J., Aljishi, S., Smith, Z E, Chu, V., Schwartz, R., Wagner, S.

Materials Research Society
9 国際会議録 LIGHT-INDUCED DEFECTS IN MEDIUM AND LOW GAP a-Si,Ge:H,F ALLOYS

Chu, V., Conde, J.P., Shen, D.S., Aljishi, S., Wagner, S.

Materials Research Society
4 国際会議録 REDUCING THE SATURATED DEFECT DENSITY IN a-Si:H BY POST-GROWTH ANNEALS

Yoon, J.H., Xu, X., Kotharay, M., Wagner, S.

Materials Research Society
10 国際会議録 TEMPERATURE DEPENDENCE OF THE GROWTH AND SATURATION OF LIGHT-INDUCED DEFECTS IN a-Si:H

Isomura, M., Hata, N., Wagner, S.

Materials Research Society
5 国際会議録 EFFECT OF SUPERLATTICE DOPED LAYERS ON THE PERFORMANCE OF a-Si:H P-I-N SOLAR CELLS

Smith, Z.E., Wagner, S.

Materials Research Society
11 国際会議録 THERMAL EQUILIBRATION BETWEEN BAND TAIL AND NEAR SURFACE DEFECT STATES IN HYDROGENATED AMORPHOUS SILICON AND SILICON-GERMANIUM ALLOYS

Aljishi, S., Jin, S., Ley L., Wagner,. S.

Materials Research Society
6 国際会議録 EFFECT OF DEPOSITION-INDUCED ANNEALABLE DEFECTS ON LIGHT-INDUCED DEFECT GENERATION IN a-Si:H

Yoon, J.-H.

Materials Research Society
12 国際会議録 SATURATION BEHAVIOR OF THE LIGHT-INDUCED DEFECT DENSITY IN HYDROGENATED AMORHOUS SILICON

Park, H. R.., Liu, J. Z., Cabarrocas, i Roca, P., Maruyama, A., Isomura, M., Wagner, S., Abelson, J. R., Finger, F.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12