RESONANT PHOTOLUMINESCENCE EXCITATION IN GaAs GROWN DIRECTLY ON Si

RESONANT PHOTOLUMINESCENCE EXCITATION IN GaAs GROWN DIRECTLY ON Si

著者名:

掲載資料名:

Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

116

発行年:

1988

開始ページ:

239

終了ページ:

244

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837869 [0931837863]

言語:

英語

請求記号:

M23500/116

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015601
シリーズID:	PA00000011
会議名:	Symposium on heteroepitaxy on silicon
回次:	1988
会議開催地:	Reno, NV, USA
会議開催年:	1988.04.05-1988.04.08

類似資料:

1 国際会議録 PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTRA OF GaAS GROWN DIRECTLY ON Si Zemon, S, Shastry, S.K., Norris, P., Jagannath, C., Lambert, G Materials Research Society	7 国際会議録 EXCITED STATE ABSORPTION AND CROSS SECTIONS FOR Er-DOPED GLASSES Zemon, S., Lambert, G., Miniscalco, W. J., Andrews, L. J., Hall, B. T. Materials Research Society
2 国際会議録 PHOTOLUMINESCENCE STUDY OF GaAs/A1GaAs QUANTUM WELLS GROWN ON Si SUBSTRATES Jagannath, C., Zemon, S., Norris, P., Elman, B. S., Shastry, K. Materials Research Society	8 国際会議録 EFFICIENT ERBIUM-DOPED FIBER AMPLIFIERS PUMPED IN THE 800-nm BAND Pedersen, B., Zemon, S., Miniscalco, W.J. Materials Research Society
3 国際会議録 OPTICAL CHARACTERIZATION OF GaAs/Si : SPECTRAL FEATURES IN THE EXCITONIC REGION Zemon, S., Shastry, S. K., Jagannath, C., Norris, P., Lambert, G. Materials Research Society	9 国際会議録 OMVPE GROWTH AND CHARACTERIZATION OF GaAs ON Si FOR DEVICE APPLICATIONS Shastry, S.K., Zemon, S., Armiento, C., Stern, M.B., Levinson, M., Lehman, L., Rothman, M., Dugger, D., Hefter, J. Materials Research Society
4 国際会議録 LOW-TEMPERATURE PHOTOLUMINESCENCE OF MOVCVD GaAs GROWN DIRECTLY ON Si Wilson, B. A., Bonner, C. E., Harris, T. D., Lamont, M. G., Miller, R. C, Sputz, S. K., Vermon, S. M., Haven, V. E., … Materials Research Society	10 国際会議録 EVIDENCE FOR STRONG TRAPPING BY IONIZED DONORS OF FREE EXCITRONS IN EXCITED STATES FOR HIGH PURITY GaAs AND A1GaAs Zemon, S., Lambert, G. Materials Research Society
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6 国際会議録 NEAR GAP PHOTOLUMINESCENCE OF GaAs GROWN DIRECTLY ON InP Schnoes, Lamoni M., Harris, T. D., Hobson, W. S., Lum., R. M., Klingent, J. K. Materials Research Society	12 国際会議録 PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF MOCVD-GROWN: GaAs:V Kao, Y.J., Haegel, N.M., Hobson, W.S. Materials Research Society

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