PHOTOLUMINESCENCE STUDIES OF ANNEALED GaAs FILMS GROWN ON Si SUBSTRATES

PHOTOLUMINESCENCE STUDIES OF ANNEALED GaAs FILMS GROWN ON Si SUBSTRATES

著者名:

掲載資料名:

Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

116

発行年:

1988

開始ページ:

233

終了ページ:

238

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837869 [0931837863]

言語:

英語

請求記号:

M23500/116

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015601
シリーズID:	PA00000011
会議名:	Symposium on heteroepitaxy on silicon
回次:	1988
会議開催地:	Reno, NV, USA
会議開催年:	1988.04.05-1988.04.08

類似資料:

1 国際会議録 ONSET OF MISFIT DISLOCATION GENERATION IN AS-GROWN AND ANNEALED Si1-xGex/Si FILMS Scott, M.P., Landerman,S.S., Kamins, T.I., Rosner, S.J., Nauka, K., Noble, D.B., Hoyt, J.L., King, C.A., Gronet, C.M., … Materials Research Society	7 国際会議録 PHOTOLUMINESCENCE STUDY OF GaAs/A1GaAs QUANTUM WELLS GROWN ON Si SUBSTRATES Jagannath, C., Zemon, S., Norris, P., Elman, B. S., Shastry, K. Materials Research Society
2 国際会議録 SPATIAL INHOMOGENEITIES OF THE LUMINESCENCE AND ELECTRICAL PROPERTIES OF MBE GROWN GaAs ON Si Reid, G.A., Nauka, K., Rosner, S.J., Koch, S.M., Harris, Jr., J.S. Materials Research Society	8 国際会議録 STRUCTURAL CHARACTERIZATION OF THIN, LOW TEMPERATURE FILMS OF GaAs ON Si SUBSTRATES Rosner, S. J., Koch, S. M., Harris Jr., J. S. Materials Research Society
3 国際会議録 DEEP ELECTRON TRAPS IN MBE GaAs ON Si Nauka, K., Reid, G. A., Rosner, S. J., Koch, S. M., Harris Jr., J. S. Materials Research Society	9 国際会議録 GRIN SCH SQW AIGaAs/GaAs lasers grown by molecular beam epitaxy:modeling and operating characteristics (Invited Paper) Bugajski,M., Kaniewska,M., Reginski,K., Malag,A., Lepkowski,S., Muszalski,J. SPIE-The International Society for Optical Engineering
4 国際会議録 MICROSTRUCTURE OF THIN LAYERS OF MBE-GROWTH GaAS ON Si SUBSTRATES Rosner, S.J., Koch, S.M., Lederman, S., Harris, J.Jr. S. Materials Research Society	10 国際会議録 RAPID THERMAL ANNEALING OF GaAs FILMS ON (001) Si SUBSTRATE GROWN BY SOLID PHASE EPITAXY TECHNIQUE Choo, W.K., Cho, K.I., Lee, J.Y., Park, S.C., Kwon, O.J. Materials Research Society
5 国際会議録 NEAR GAP PHOTOLUMINESCENCE OF GaAs GROWN DIRECTLY ON InP Schnoes, Lamoni M., Harris, T. D., Hobson, W. S., Lum., R. M., Klingent, J. K. Materials Research Society	11 国際会議録 STRUCTURAL STUDIES OF NUCLEATION AND THE INITIAL STAGES OF GROWTH OF EPITAXIAL GaAs ON Si(100) SUBSTRATES Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S. M., Harris, J. S. Materials Research Society
6 国際会議録 LOW-TEMPERATURE PHOTOLUMINESCENCE OF MOVCVD GaAs GROWN DIRECTLY ON Si Wilson, B. A., Bonner, C. E., Harris, T. D., Lamont, M. G., Miller, R. C, Sputz, S. K., Vermon, S. M., Haven, V. E., … Materials Research Society	12 国際会議録 Rutherford Backscattering and Photoluminescence Studies of Erbium Implanted GaAs Daly, S. E., Henry, M. O., Alves, E., Soares, J. C., Gwilliam, R., Sealy, B. J., Freitag, K., Vianden, R., Stievenard, … MRS - Materials Research Society

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