SPATIAL INHOMOGENEITIES OF THE LUMINESCENCE AND ELECTRICAL PROPERTIES OF MBE GROWN GaAs ON Si

SPATIAL INHOMOGENEITIES OF THE LUMINESCENCE AND ELECTRICAL PROPERTIES OF MBE GROWN GaAs ON Si

著者名:

掲載資料名:

Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

116

発行年:

1988

開始ページ:

227

終了ページ:

232

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837869 [0931837863]

言語:

英語

請求記号:

M23500/116

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015601
シリーズID:	PA00000011
会議名:	Symposium on heteroepitaxy on silicon
回次:	1988
会議開催地:	Reno, NV, USA
会議開催年:	1988.04.05-1988.04.08

類似資料:

1 国際会議録 DEEP ELECTRON TRAPS IN MBE GaAs ON Si Nauka, K., Reid, G. A., Rosner, S. J., Koch, S. M., Harris Jr., J. S. Materials Research Society	7 国際会議録 STRUCTURAL CHARACTERIZATION OF THIN, LOW TEMPERATURE FILMS OF GaAs ON Si SUBSTRATES Rosner, S. J., Koch, S. M., Harris Jr., J. S. Materials Research Society
2 国際会議録 GROWTH OF GALLIUM ARSENIDE ON SILICON IN MASKED, ETCHED TRENCHES Adkisson, J.W., Kamins, T.I., Koch, G.M., Harris, Jr., J.S., Rosner, S.J., Nauka, K., Reid, G.A. Materials Research Society	8 国際会議録 The Mechanical Properties of NiAl Grown on GaAs by Molecular Beam Epitaxy Weckwerth, M.V., Harris, J.S., Jr., Pao, Y-C. Electrochemical Society
3 国際会議録 MICROSTRUCTURE OF THIN LAYERS OF MBE-GROWTH GaAS ON Si SUBSTRATES Rosner, S.J., Koch, S.M., Lederman, S., Harris, J.Jr. S. Materials Research Society	9 国際会議録 NUCLEATION OF GaAs ON VICINAL Si (100) SURFACES Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S. M., Harris Jr., J. S. Materials Research Society
4 国際会議録 PHOTOLUMINESCENCE STUDIES OF ANNEALED GaAs FILMS GROWN ON Si SUBSTRATES Bugajski, M., Nauka, K., Rosner, S.J., Mars, D. Materials Research Society	10 国際会議録 Er-luminescence in MBE-grown AlGaAs Gusev,O.B., Lindmark,E.K., Prineas,J.P., Bresler,M.S., Khitrova,G., Gibbs,H.M., Yassievich,I.N., Zakharchenya,B.P., … Trans Tech Publications
5 国際会議録 THE GROWTH OF GaAS ON Si BY MOLECULAR BEAM EPITAXY Koch, S.M., Rosner, S.J., Schlom, Darrell, Harris, J. Jr. S. Materials Research Society	11 国際会議録 GaAs/Si NUCLEATION AND BUFFER LAYER GROWTH Koch, Stephanie M., Hull, Robert, Rosner, S. Jeffrey, Harris, Jr., Janes S. Materials Research Society
6 国際会議録 *THE NUCLEATION AND GROWTH OF GaAs ON SI Harris Jr., J. S., Koch, S. M., Rosner, S. J. Materials Research Society	12 国際会議録 Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si As, D. J., Richter, A., Busch, J., Schottker, B., Lubbers, M., Mimkes, J., Schikora, D., Lischka, K., Kriegseis, W., … MRS-Materials Research Society

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