MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs ON SILICON WITH BURIED IMPLANTED OXIDES | 東京工業大学附属図書館文献データベース

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MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs ON SILICON WITH BURIED IMPLANTED OXIDES

著者名:

Humphreys, T. P.

Posthill, J. B.

さらに 4 件

掲載資料名:

Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

107

発行年:

1988

開始ページ:

513

終了ページ:

518

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837753 [0931837758]

言語:

英語

請求記号:

M23500/107

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015593
シリーズID:	PA00000011
会議名:	Symposium on silicon-on-insulator and buried metals in semiconductors
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

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