HIGH DOSE CARBON ION IMPLANTATION STUDIES IN SILICON

HIGH DOSE CARBON ION IMPLANTATION STUDIES IN SILICON

著者名:

掲載資料名:

Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

107

発行年:

1988

開始ページ:

483

終了ページ:

488

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837753 [0931837758]

言語:

英語

請求記号:

M23500/107

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015593
シリーズID:	PA00000011
会議名:	Symposium on silicon-on-insulator and buried metals in semiconductors
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

類似資料:

1 国際会議録 OXYGEN-DOPED-SILICON/SILICON HETEROINTERFACES BY ION IMPLANTATION Srikanth, K., Ashok, s. Materials Research Society	7 国際会議録 HCl OXIDATION OF HIGH DOSE ARSENIC IMPLANTED SILICON Choi, Seong Soo, Numan, M.Z., Finstad, T.G., Chu, W.K., Fathy, D. Materials Research Society
2 国際会議録 OXYGEN DOPED SILICON SURFACE LAYERS BY ION IMPLANTATION Srikanth, K., Ashok, S,. Materials Research Society	8 国際会議録 SiC Precipitate Formation During High-Dose Carbon Implantation Into Silicon Lindner, J. K. N., Volz, K., Stritzker, B. MRS - Materials Research Society
3 国際会議録 ATOMIC HYDROGEN PASSIVATION OF HIGH ENERGY HYDROGEN IMPLANTS Srikanth, K., Shenal, J., Ashok, S. Materials Research Society	9 国際会議録 SiC Precipitate Formation During High-Dose Carbon Implantation into Silicon Lindner, J. K. N., Volz, K., Stritzker, B. MRS - Materials Research Society
4 国際会議録 Hydrogen Interaction with Disordered Silicon Ashok,S., Srikanth,K. Trans Tech Publications	10 国際会議録 IMPURITY GETTERING BY IMPLANTED CARBON IN SILICON Wong, H., Cheung, N.. W., Yu, K. M., Chu, P. K., Liu, J. Materials Research Society
5 国際会議録 THE STUDY OF DAMAGE PROFILE OF THE ION-IMPLANTED LAYER ON SILICON BY SPECTROSCOPIC ELLIPSOMETRY Luo, J., McMarr, P. J, Vedam,K. North-Holland	11 国際会議録 SPREADING RESISTANCE PROFILING STUDY OF GeSi/Si STRUCTURES BY HIGH DOSE Ge IMPLANTATION INTO Si Cheung, W. Y., Wong, S. P., Wilson, I. H., Zhang, Tonghe, Chu, Paul K. MRS - Materials Research Society
6 国際会議録 SUPPRESSION OF ACCEPTOR DEACTIVATION IN SILICON BY DISORDERED SURFACE REGIONS Srikanth, K., Ashok, S. Materials Research Society	12 国際会議録 PASSIVATION OF ION-BEAM-INDUCED DEFECTS AT AND AROUND THE Si-SiP2 INTERFACE BY ION BEAM HYDROGENATION Kar, S., Srikanth, K., Ashok, S. Materials Research Society

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