Blank Cover Image

TOTAL DIELECTRIC ISOLATION (TDI) OF DEVICE ISLANDS USING SIMOX/SOI TECHNOLOGY

著者名:
Hemment, P. L. F.
Robinson, A. K.
Reeson, K. J.
Davis, J. R.
Kilner, J. R.
Chater, R. J.
Stoemenos, J.
さらに 2 件
掲載資料名:
Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
107
発行年:
1988
開始ページ:
87
終了ページ:
92
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837753 [0931837758]
言語:
英語
請求記号:
M23500/107
資料種別:
国際会議録

類似資料:

1 国際会議録 EVIDENCE FOR OXYGEN CONCENTRATION CHANGES INDUCED BY LOW-TEMPERATURE 0-18 IMPLANTATION INTO A SIMOX BURIED-OXIDE LAYER

Scalon, P. J., Hemment, P. L. F., Robinson, A. K., Reeson, K. J., Chater, R. J., Kilner, J. A., Harbeke, G.

Materials Research Society
7 国際会議録 CHARACTERIZATION OF DEVICE GRADE SOI STRUCTURES FORMED BY IMPLANTATION OF HIGH DOSES OXYGEN

Hemment, P. L. F., Maydell-Ondrusz, E. A., Stephens, K. G., Arrowsmith, R. P., Glaccum, A> C., Kilner, J. A., Butcher, …

North-Holland
2 国際会議録 DETERMINATION OF THE NITROGEN CONTENT OF AS-IMPLANTED AND ANNEALED SIMOX SUBSTRATES

Kilner, J. A., Chater, R. J., Biswas, S., Hemment, P. L. F., Reeson, K. J.

Materials Research Society
8 国際会議録 New high voltage device structures in SOI based technology

Udrea, F., Milne, W.I., Hemment, P.L.F.

Electrochemical Society
3 国際会議録 SYNTHESIS OF BURIED LAYERS OF β SiC IN SINGLE CRYSTAL SILICON

Reeson, K. J., Hemment, P. L. F., Stoemenos, J., Davis, J. R., Celler, G. K.

Materials Research Society
9 国際会議録 DOSE DEPENCE OF DEFECTS IN SILICON PRODUCED BY HIGH DOSE,HIGH TEMPERATURE 0+ IMPLANTATION.

HOBBS,A., BARKLIE,R.C., REESON,K., HEMMENT,P.L.F.

Trans Tech Publications
4 国際会議録 MONITORING SIMOX LAYER PROPERTIES AND IMPLANTATION TEMPERATURE BY OPTICAL MEASUREMENTS

Harbeke, G., Steigneier, E. F., Hemment, P. L. F., Reeson, K. J., Jastrzebski, L.

Materials Research Society
10 国際会議録 AN INVESTIGATION OF BURIED LAYER FORMATION BY 40keV OXYGEN IMPLANTATION INTO SILICON

Li, Y., Kilner, A., Chater, R. J., Tate, T. J., Hemment, P. L. F., Nejim, A.

Materials Research Society
5 国際会議録 A STUDY OF THE EFFECTS OF IMPLANTATION DOSE AND ANNEALING TEMPERATURE ON THE FORMATION OF BURIED NITRIDE SOI STRUCTURES

Kerger, M.B., Kwor, R., Zeller, M., Hemment, P.L.F., Reeson, K.J.

Materials Research Society
11 国際会議録 The SOI odyssey

Hemment, P.L.F.

Electrochemical Society
6 国際会議録 TEM OBSERVATIONS OF SILICON-ON-INSULATOR STRUCTURES FORMED BY NITROGEN IMPLANTATION WITH ANNEALING AT 1405°C

Meekison, C. D., Booker, G. R., Reeson, K. J., Hemment, P. L. F., Celler, G. K.

Materials Research Society
12 国際会議録 Structural characterization by RBS and TEM of SiC buried layers formed by ion beam synthesis at high temperature

Nejim, A., Hemment, P.L.F., Stoemenos, J.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12