EFFECTS OF SILICON IMPLANTATION AND PROCESSING TEMPERATURE ON PERFORMANCE OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FABRICATED FROM LOW PRESSURE CHEMICAL VAPOR DEPOSITED AMORPHOUS SILICON

EFFECTS OF SILICON IMPLANTATION AND PROCESSING TEMPERATURE ON PERFORMANCE OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FABRICATED FROM LOW PRESSURE CHEMICAL VAPOR DEPOSITED AMORPHOUS SILICON

著者名:

掲載資料名:

Polysilicon films and interfaces : symposium held December 1-3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

106

発行年:

1988

開始ページ:

305

終了ページ:

310

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837746 [093183774X]

言語:

英語

請求記号:

M23500/106

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015592
シリーズID:	PA00000011
会議名:	Symposium on polysilicon films and interfaces
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.12.01-1987.12.03

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