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CHARACTERISTICS OF ARSENIC DOPED POLYCRYSTALLINE SILICON-GATE CAPACITORS AFTER RAPID THERMAL PROCESSING

著者名:
Angelucci, R.
Wong, C. Y.
Sun, J. Y. -C
Scilla, G.
McFarland, P. A.
Megdanis, A. C.
Landi, E.
さらに 2 件
掲載資料名:
Polysilicon films and interfaces : symposium held December 1-3, 1987, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
106
発行年:
1988
開始ページ:
285
終了ページ:
292
総ページ数:
8
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837746 [093183774X]
言語:
英語
請求記号:
M23500/106
資料種別:
国際会議録

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