THE ROLE OF ELECTRON AND HOLE TRAPS IN THE DEGRADATION AND BREAKDOWN OF THERMALLY GROWN SiO2 LAYERS

THE ROLE OF ELECTRON AND HOLE TRAPS IN THE DEGRADATION AND BREAKDOWN OF THERMALLY GROWN SiO2 LAYERS

著者名:

掲載資料名:

SiO[2] and its interfaces : symposium held November 30-December 5, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

105

発行年:

1988

開始ページ:

205

終了ページ:

218

総ページ数:

14

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837739 [0931837731]

言語:

英語

請求記号:

M23500/105

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015591
シリーズID:	PA00000011
会議名:	Symposium on SiO2 and its interfaces
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.05

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