LATTICE RELAXATION OF THE DX CENTERS IN Ga1-XAlXAs AND OF THE PRESSURE-INDUCED DEEP DONORS IN GaAs

LATTICE RELAXATION OF THE DX CENTERS IN Ga1-XAlXAs AND OF THE PRESSURE-INDUCED DEEP DONORS IN GaAs

著者名:

Li, M. F.

掲載資料名:

Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

104

発行年:

1988

開始ページ:

573

終了ページ:

578

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837722 [0931837723]

言語:

英語

請求記号:

M23500/104

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015590
シリーズID:	PA00000011
会議名:	Symposium on defects in electronic materials
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

類似資料:

1 国際会議録 Reduction of Capture Barrier Height of Pressure-Induced Deep Donors(DX Center)in GaAs:Si Li,M.F., Yu,P.Y., Shan,W., Hansen,W.L., Weber,E.R. Trans Tech Publications	7 国際会議録 High pressure studies of electronic states with small lattice relaxation of DX-centres in GaAs Dmochowski,J.E., Wang,P.D., Stradling,R.A., Trzeci-akowski,W. Trans Tech Publications
2 国際会議録 Pressure Dependence of the DX Center in Al0.35Ga0.65As:Te Li,M.F., Shan,W., Yu,P.Y., Hansen,W.L., Weber,E.R., Bauser,E. Trans Tech Publications	8 国際会議録 Persistent Photoluminescence of DX-Centers in Gal-xAlxAs:Si Jantsch,W., Brunthaler,G., Ploog,K., Dmochowski,J.E., Langer,J.M. Trans Tech Publications
3 国際会議録 Studies of deep level transient spectroscopy of DX centers of GaAlAs:Te under uniaxial stress Li,M.-F., Yu,P.Y., Weber,E.R., Bauser,E., Hansen,W.L., Haller,E.E. Trans Tech Publications	9 国際会議録 DX CENTER IN GaAs-GaA1As SUPERLATTICES SUPPRESSION AND IDENTIFICATION Feng, S. L., Bourgoin, J. C., Bardeleben, von H. J., Barbier, E., Hirtz, J. P., Mollot, F. Materials Research Society
4 国際会議録 Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface Shan,W., Li,M.F., Yu,P.Y., Walukiewicz,W., Hansen,W.L. Trans Tech Publications	10 国際会議録 The Ultrasonics-Induced-Quenching of PPC Releated to DX Centers in AlxGa1-x-As Belyaev,A.E., Bardeleben,H.J.von, Fille,M.L., Oborina,E.I., Ryabchenko,Yu.S., Savchuk,A.U., Sheinkman,M.K. Trans Tech Publications
5 国際会議録 Alloy Effects on Emission Rates for Deep Donors(DX Centers)in AlxGa1-xAS with very low AlAS Mole Fraction Mooney,P.M., Theis,T.N., Wright,S.L. Trans Tech Publications	11 国際会議録 EXPERIMENTAL CONFIRMATION OF THE DONOR-LIKE NATURE OF DX IN A1GaAs Dobson, T. W., Wager. J. F. Materials Research Society
6 国際会議録 DX centers in AlGaAs and pressurised GaAs Anand, S., Subramanian, S., Arora, B. M., Lu, Y. C., Bauser, E. MRS - Materials Research Society	12 国際会議録 The Deep Donor(DX Center)in GaAs:Deterlnination of the Entropy Term in the Activation Energy Theis,T.N., Morgan,T.N., Parker,B.D., Wright,S.L. Trans Tech Publications

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