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REDISTRIBUTION OF IMPLANTED HYDROGEN IN p+ GaAs (Zn) AND n+ GaAs(Si) CRYSTALS

著者名:
掲載資料名:
Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
104
発行年:
1988
開始ページ:
331
終了ページ:
336
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837722 [0931837723]
言語:
英語
請求記号:
M23500/104
資料種別:
国際会議録

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