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THE EFFECTS OF HIGH AND LOW DOSE HYDROGEN ION IMPLANTATIONS ON Al/n-Si SCHOTTKY DIODES

著者名:
Yapsir, A. S.
Hadizad, P.
Lu, T. -M.
Corelli, J. C.
Corbett, J. W.
Lanford, W. A.
Bakhru, H.
さらに 2 件
掲載資料名:
Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
104
発行年:
1988
開始ページ:
297
終了ページ:
300
総ページ数:
4
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837722 [0931837723]
言語:
英語
請求記号:
M23500/104
資料種別:
国際会議録

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