LOCALIZATION OF HYDROGEN IN B AND In DOPED SILICON BY ION CHANNELING AND PAC | 東京工業大学附属図書館文献データベース

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LOCALIZATION OF HYDROGEN IN B AND In DOPED SILICON BY ION CHANNELING AND PAC

著者名:

Carstanjen, H. -D.

さらに 4 件

掲載資料名:

Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

104

発行年:

1988

開始ページ:

265

終了ページ:

270

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837722 [0931837723]

言語:

英語

請求記号:

M23500/104

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015590
シリーズID:	PA00000011
会議名:	Symposium on defects in electronic materials
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

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