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CHARACTERIZATION OF MBE GROWN GaAs WITH ISOELECTRONIC DOPING OF INDIUM OR ANTIMONY

著者名:
Li, A. Z.
Kim, H. K.
Jeong, J.
Zhao, J.
Schlesinger, T. E.
Milnes, A. G.
さらに 1 件
掲載資料名:
Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
102
発行年:
1988
開始ページ:
497
終了ページ:
502
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837708 [0931837707]
言語:
英語
請求記号:
M23500/102
資料種別:
国際会議録

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