INTERFACE RECOMBINATION VELOCITIES IN LAYERED GaAs AND AlGaAs/GaAs STRUCTURES GROWN BY OMVPE

INTERFACE RECOMBINATION VELOCITIES IN LAYERED GaAs AND AlGaAs/GaAs STRUCTURES GROWN BY OMVPE

著者名:

掲載資料名:

Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

102

発行年:

1988

開始ページ:

183

終了ページ:

186

総ページ数:

4

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837708 [0931837707]

言語:

英語

請求記号:

M23500/102

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015588
シリーズID:	PA00000011
会議名:	Symposium on epitaxy of semiconductor layered structures
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.04

類似資料:

1 国際会議録 EFFECTS OF GROWTH CONDITIONS ON EL2 CONCENTRATION IN OMVPE-GaAs Venkatasubramanian, R., Lee, W. I., Ghanhdi, S. K., Borrego, J. M. Materials Research Society	7 国際会議録 HIGH-CONDUCTANCE GaAs TUNNEL DIODES BY OMVPE Venkatasubramanian, R., Timmons, M. L., Colpitts, T. S. Materials Research Society
2 国際会議録 OPTIMISATION OF THE HETEROEPITAXY OF Ge ON GaAs FOR MINORITY-CARRIER LIFETIME Venkatasubramanian, R., Timmons, M. L., Bothra, S., Borrego, J. M. Materials Research Society	8 国際会議録 *RADIATIVE RECOMBINATION AND CARRIER LIFETIMES IN SURFACE-FREE GaAs HOMOSTRUCTURES Smith, L.M., Wolford, D.J., Venkatasubramanian, R., Ghandhi, S.K. Materials Research Society
3 国際会議録 EL-2 DEFECT FORMATIN AND CARBON INCORPORATIN IN GaAs GROWN BY ORGANOMETALLIC VAPOR PHASE EPITAXY Venkatasubramanian, R., Borrego, J.M., Ghandi, S.K. Materials Research Society	9 国際会議録 Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications Kumar, R. J., Gutmann, R. J., Borrego, J. M., Dutta, P. S., Wang, C. A., Martinelli, R. U., Nichols, G. Materials Research Society
4 国際会議録 HEAVILY-DOPED n+-GaAs WITH LOW COMPENSATION GROWN BY ATMOSPHERIC OMVPE Venkatasubramanian, R., Ghandhi, S. K. Materials Research Society	10 国際会議録 GROWTH AND CHARACTERIZATION OF CdTe LAYERS On InSb SUBSTRATES PREPARED BY ORGANOMETALLIC EPITAXY Bhat, I., Sundaram, L. M. G., Borrego, J. M., Gandhi, S. K. Materials Research Society
5 国際会議録 Characterisation of GaAs/AlGaAs heterostructures grown by OMVPE using trimethylamine alane as a new alu-minum source Hobson,W.S., McAfee,S.R., Jones,K.S., Paroskevopoulos,N.C., Abernathy,C.R., Sputz,S.K., Harris,T.D., Schnoes,M.Lamont, … Trans Tech Publications	11 国際会議録 ELECTRICAL AND OPTICAL PROPERTIES OF VANADIUM IN OMVPE-GROWN GaAs Hobson, W. S., Pearton, S. J., Swaminathan, V., Jordan, A. S., Kao, Y. J., Haegel, M., Kanber, H. Materials Research Society
6 国際会議録 INTERFACE RECOMBINATION AND THRESHOLD CURRENT IN GRINSCH-QW AlGaAs/GaAs LASER DIODES Xie, K., Kim, H. M., Wie, C. R., Varriano, J. A., Wicks, G. W. Materials Research Society	12 国際会議録 *Surfactant effects on ordering in GaInP grown by OMVPE Stringfellow, G. B., Fetzer, C. M., Lee, R. T., Jun, S. W., Shurtleff, J. K. MRS-Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12