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HIGH QUALITY n-Cd0.2Hg0.8Te GROWN BY LIQUID PHASE EPITAXY

著者名:
掲載資料名:
Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
102
発行年:
1988
開始ページ:
91
終了ページ:
96
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837708 [0931837707]
言語:
英語
請求記号:
M23500/102
資料種別:
国際会議録

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