LASER ENHANCED SELECTIYE EPITAXY OF III-V COMPOUNDS

LASER ENHANCED SELECTIYE EPITAXY OF III-V COMPOUNDS

著者名:

Karam, N. H.

掲載資料名:

Laser and particle-beam chemical processing for microelectronics : symposium held December 1-3, 1987, Boston, Massachusetts, USA

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

101

発行年:

1988

開始ページ:

285

終了ページ:

290

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837692 [0931837693]

言語:

英語

請求記号:

M23500/101

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015587
シリーズID:	PA00000011
会議名:	Symposium on laser and particle-beam chemical processing for microelectronics
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.12.01-1987.12.03

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2 国際会議録 LASER STIMULATED DEPOSITION OF GaAs, GaAsP AND GaAsP-GaAS SUPERLATTICES Karam, N.H., Bedair, S.M., El-Masry, N.A., Griffis, D. Materials Research Society	8 国際会議録 HIGH QUALITY GaAs ON Si BY SELECTIVE AREA EPITAXY Karam, N. H., Haven, V,, Vernon, S. M., El-Masry, N., Lingunis, M., Maegel, N. Materials Research Society
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