ACTIVATION CHARACTERISTICS OF IMPLANTED DOPANTS IN InAs, GaSb AND GaP AFTER RAPID THERMAL ANNEALING

ACTIVATION CHARACTERISTICS OF IMPLANTED DOPANTS IN InAs, GaSb AND GaP AFTER RAPID THERMAL ANNEALING

著者名:

掲載資料名:

Fundamentals of beam-solid interactions and transient thermal processing : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

100

発行年:

1988

開始ページ:

689

終了ページ:

694

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837685 [0931837685]

言語:

英語

請求記号:

M23500/100

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015586
シリーズID:	PA00000011
会議名:	Symposium on fundamentals of beam-solid interactions and transient thermal processing
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

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